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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A *High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V *Complement to Type 2SB1021 APPLICATIONS *Hammer driver,pulse motor drive applications. *High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 80 V 80 V 5 V 7 A 0.2 A UNIT .cn mi e IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 30 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1416 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V A ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain hFE -2 DC Current Gain Switching times ton Turn-on Time tstg Storage Time w w scs .i w IC= 3A; VCE= 3V IC= 7A; VCE= 3V .cn mi e 2000 1000 0.8 3.0 2.5 3.0 mA 15000 s IB1= -IB2= 6mA RL= 15; VCC= 45V PW=20s; Duty Cycle1% s tf Fall Time s isc Websitewww.iscsemi.cn 2 |
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